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Working principle of gas nitriding furnace:

 

1. Ammonia enters the nitriding furnace and is heated to a suitable temperature through the heating system.

 

2. The heated ammonia gas comes into contact with the metal surface and undergoes a series of reactions to undergo nitriding reactions with the surface metal atoms.

 

During the nitriding reaction, nitrogen atoms form a nitride film with metal atoms, covering the metal surface.

 

Characteristics of gas nitriding furnace:

 

1. High temperature nitriding: Gas nitriding furnaces can perform nitriding reactions at high temperatures, typically operating at temperatures between 800 ° C and 1200 ° C. This high-temperature nitriding makes nitride films have good crystallinity and stability.

 

2. Uniform nitriding: The gas nitriding furnace uses ammonia as the nitriding source, which can be evenly distributed in the reaction chamber and react with the metal surface. This uniformity ensures the uniformity of the nitride film on the entire surface of the silicon wafer.

 

3. Rapid nitriding: Gas nitriding furnaces have a fast nitriding rate. Under high temperature and appropriate atmosphere, the nitriding reaction can be completed in a relatively short time. This rapid nitriding can improve production efficiency.

 

4. Environmental protection and energy conservation: Gas nitriding furnaces use ammonia for nitriding reactions. Compared to other nitriding methods, their exhaust emissions are relatively less, reducing environmental pollution. In addition, the gas nitriding furnace locks heat inside the furnace, reducing energy waste and having good energy-saving effects.

 

5. Widely used: Gas nitriding furnaces can be used to prepare silicon nitride (SiNx) thin films, aluminum nitride (AlNx) thin films, etc. These nitride thin films have important application value in fields such as electronic devices, solar cells, coatings, etc.